Method for manufacturing indium gallium aluminium nitride...

Details Method for manufacturing indium gallium aluminium nitride... Method for manufacturing indium gallium aluminium nitride...

2006-09-26

2009-11-10

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S551000, C438S552000, C438S553000, C438S555000, C438S671000, C257SE21121, C257SE21125, C257SE21127, C257SE21131

Reexamination Certificate

active

07615420

ABSTRACT:
The method for manufacturing the indium gallium aluminium nitride (InGaAlN) thin film on silicon substrate, which comprises the following steps: introducing magnesium metal for processing online region mask film, that is, or forming one magnesium mask film layer or metal transition layer; then forming one metal transition layer or magnesium mask layer, finally forming one layer of indium gallium aluminium nitride semiconductor layer; or firstly forming one layer of metal transition layer on silicon substrate and then forming the first indium gallium aluminium nitride semiconductor layer, magnesium mask layer and second indium gallium aluminium nitride semiconductor layer in this order. This invention can reduce the dislocation density of indium gallium aluminium nitride materials and improve crystal quality.

REFERENCES:
patent: 5152805 (1992-10-01), Geddes et al.
patent: 6955932 (2005-10-01), Hovel et al.

Affiliated with

Also associated with

Rating

Method for manufacturing indium gallium aluminium nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing indium gallium aluminium nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing indium gallium aluminium nitride... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4117720