Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Reexamination Certificate
2009-03-09
2011-12-20
Ahmadi, Mohsen (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
C438S046000, C438S047000, C438S093000, C438S094000, C438S795000, C257SE21002, C257SE21127, C257SE21441, C257SE21459, C257SE21462
Reexamination Certificate
active
08080484
ABSTRACT:
A method for manufacturing a Group III nitride semiconductor layer according to the present invention includes a sputtering step of disposing a substrate and a target containing a Group III element in a chamber, introducing a gas for formation of a plasma in the chamber and forming a Group III nitride semiconductor layer added with Si as a dopant on the substrate by a reactive sputtering method, wherein a Si hydride is added in the gas for formation of a plasma.
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Miki Hisayuki
Yokoyama Yasunori
Ahmadi Mohsen
Showa Denko K.K.
Sughrue & Mion, PLLC
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