Method for manufacturing group-III nitride compound...

Details Method for manufacturing group-III nitride compound... Method for manufacturing group-III nitride compound...

2007-01-16

2007-01-16

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S022000, C438S042000, C438S044000, C438S481000

Reexamination Certificate

active

10473075

ABSTRACT:
In the epitaxial growth process in which each growth region D is zoned by a mask2formed in grid pattern, because a consumption region C of the Group III nitride compound semiconductor is formed in the central portion of each band of the mask2between each adjacent edge portion of the growth region D, Group III or Group V raw material is never unnecessarily supplied to the edge portion of the growth region D. As a result, difference of Group III or Group V rare material supply amount to the edge portion and central portion of the device formation region D is suppressed and the edge portion of the device region may not be convexity.

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