Method for manufacturing gate structure with sides of its...

Details Method for manufacturing gate structure with sides of its... Method for manufacturing gate structure with sides of its...

2005-09-13

2005-09-13

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S238000, C438S381000

Reexamination Certificate

active

06943099

ABSTRACT:
A method for manufacturing a gate structure has the steps of providing a substrate; forming a conducting layer on the substrate; forming a metal layer on the conducting layer; forming a patterned first protective layer on the metal layer, the protective layer having a side surface; partially removing the side surface of the first protective layer to form a first gate element having a first gate pattern; transferring the first gate pattern to the metal layer to form a second gate element; conformally forming a second protective layer on the first gate element, the second gate element and the conducting layer, causing a second gate pattern; and transferring the second gate pattern to the conducting layer to form a third gate element.

REFERENCES:
patent: 5610089 (1997-03-01), Iwai et al.
patent: 6284633 (2001-09-01), Nagabushnam et al.
patent: 6524898 (2003-02-01), Nagaya

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