Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-09-10
1999-02-02
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438762, H01L 213205, H01L 21461
Patent
active
058664742
ABSTRACT:
A method for forming gate oxide layers comprising the steps of providing a silicon substrate; forming a first oxide layer on the substrate; forming a first barrier layer at an interface between the first oxide layer and the substrate; forming a second oxide layer at an interface between the first barrier layer and the substrate; forming a second barrier layer at an interface between the second oxide layer and the substrate; and forming a third oxide layer at an interface between the second barrier layer and the substrate. One of the main characteristics of the invention is that of forming a first barrier layer between the first oxide layer and the second oxide layer, and forming a second barrier layer between the second oxide layer and the third oxide layer. As a result, the present invention is capable of increasing the breakdown voltage, minimising the tunneling effect and decreasing the amount of trapped oxide charges in a gate oxide layer.
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Lebentritt Michael S.
Niebling John F.
United Microelectronics Corp.
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