Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2011-06-07
2011-06-07
Maldonado, Julio J (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S028000, C438S032000, C438S033000, C438S492000, C438S504000, C257SE21099, C257SE21112, C257SE21461, C117S097000, C117S104000
Reexamination Certificate
active
07955959
ABSTRACT:
A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.
REFERENCES:
patent: 2010/0283075 (2010-11-01), McKenzie et al.
Chang et al., “Improved ESD protection by combining InGaN-GaN MQW LEDs with GaN Schottky diodes,”IEEE Electron Device Letters, 24:129-131, 2003.
Huang Huijun
Lin Xuejiao
Pan Qunfeng
Wu Jyh Chiarng
Yeh Meng Hsin
Fulbright & Jaworski
Maldonado Julio J
Xiamen Sanan Optoelectronics Technology Co., Ltd.
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