Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-05-17
2005-05-17
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S482000, C438S483000, C438S479000, C438S778000, C438S779000
Reexamination Certificate
active
06893945
ABSTRACT:
An Al0.15Ga0.85N layer2is formed on a silicon substrate1in a striped or grid pattern. A GaN layer3is formed in regions A where the substrate1is exposed and in regions B which are defined above the layer2. At this time, the GaN layer grows epitaxially and three-dimensionally (not only in a vertical direction but also in a lateral direction) on the Al0.15Ga0.85N layer2. Since the GaN layer grows epitaxially in the lateral direction as well, a GaN compound semiconductor having a greatly reduced number of dislocations is obtained in lateral growth regions (regions A where the substrate1is exposed).
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Le Dung A.
McGinn & Gibb PLLC
Toyoda Gosei Co,., Ltd.
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