Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-04
2006-04-04
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S094000, C438S047000, C438S172000
Reexamination Certificate
active
07022597
ABSTRACT:
A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.
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Chang Chia-Wei
Lin Chin-Yi
Peng Lung-Han
Wang Sung-Li
Wu Han-Ming
Birch & Stewart Kolasch & Birch, LLP
Nhu David
Tekcore Co., Ltd.
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