Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-12-20
2008-09-02
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S283000, C438S285000, C257SE21561
Reexamination Certificate
active
07419857
ABSTRACT:
Discloses are a method for manufacturing a field effect transistor comprising a channel consisting of silicon fins and a silicon body, in which the silicon fins have an orientation different from the silicon body, as well as a transistor structure manufactured thereby. The method comprises the steps of: (a) forming a hard mask pattern on a substrate comprising a silicon thin film; (b) anisotropically etching the silicon thin film to a predetermined thickness using the hard mask pattern as a mask so as not only to form silicon fins where a channel is to be formed and a silicon pattern where a source/drain region is to be formed, but also to form a silicon body that connects the silicon fins to each other to form a channel; (c) partially etching the silicon thin film using an active mask so as to isolate the source/drain region and the device from each other; and (d) growing a gate dielectric film around the silicon channel and sequentially depositing a gate material and a gate mask on the resulting structure, followed by forming a gate region.
REFERENCES:
patent: 2005/0161739 (2005-07-01), Anderson et al.
Choi Yang-Kyu
Lee Hyun-jin
Booth Richard A.
Korea Advanced Institute of Science and Technology
Stoffel Klaus P.
Wolf & Samson PC
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