Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-26
2009-06-02
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21579, C438S597000
Reexamination Certificate
active
07541281
ABSTRACT:
A method for manufacturing an electronic device, in which a via hole and a trench for an interconnect are integrally provided in an interlayer insulating film formed on a substrate, and the via hole and the trench for the interconnect are plugged with an electric conductor film is provided. The method includes: forming a via hole in the interlayer insulating film; forming a resin film plugging the via hole on the interlayer insulating film; etching the resin film exposed outside the via hole off with an etching gas mainly containing an active hydrogen species to form a dummy plug composed of the resin film in the via hole; forming a resist mask having an opening for an interconnect on the dummy plug and on the interlayer insulating film.
REFERENCES:
patent: 7048869 (2006-05-01), Takahashi et al.
patent: 2002/0197846 (2002-12-01), Suzawa et al.
patent: 2005/0009324 (2005-01-01), Li et al.
patent: 2005/0233572 (2005-10-01), Su et al.
patent: 2007/0087554 (2007-04-01), Louis
patent: 2004-111950 (2004-04-01), None
Quirk, M. et al., Semiconductor Manufacturing Technology, 2001, Prentice-Hall, p. 351.
Ishimori Hitoshi
Soda Eiichi
NEC Electronics Corporation
Sarkar Asok K
Young & Thompson
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