Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-24
2008-10-21
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C257SE21579
Reexamination Certificate
active
07439171
ABSTRACT:
A method for manufacturing an electronic device, in which a via hole and a trench for an interconnect are integrally provided in an interlayer insulating film formed on a substrate, and the via hole and the trench for the interconnect are plugged with an electric conductor film is provided. The method includes: forming a via hole in the interlayer insulating film; forming a resin film, plugging the via hole, on the interlayer insulating film; forming a resist mask having an opening for an interconnect on the interlayer insulating film; and etching the interlayer insulating film through an etching mask of the resist mask to form a trench for the interconnect connected with the via hole. The resin film is being capable of trapping a basic substance.
REFERENCES:
patent: 6898851 (2005-05-01), Nishioka et al.
patent: 7192863 (2007-03-01), Zhijian et al.
patent: 7241682 (2007-07-01), Ho et al.
patent: 2006/0094221 (2006-05-01), Soda et al.
patent: 2004-221439 (2004-08-01), None
Soda Eiichi
Yabe Sachiko
Dang Phuc T
NEC Electronics Corporation
Young & Thompson
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