Method for manufacturing electroluminescence element

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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Details

C430S315000, C430S322000, C430S329000, C430S312000, C428S195100

Reexamination Certificate

active

08043793

ABSTRACT:
The present invention provides a method for manufacturing an electroluminescence element that has a light emitting layer containing a quantum dot and exhibits excellent life characteristics. In the method, patterning of the light emitting layer can be stably performed by a lift-off method. A photoresist layer is formed on a substrate having a first electrode layer. The photoresist layer is then exposed, developed, and patterned to ensure that a portion of the photoresist layer, which is located in a light emission area, is removed. A coating liquid containing a quantum dot having a silane coupling agent attached to the surface thereof is coated on the resultant substrate having the patterned photoresist layer and cured to form a light emitting layer. The remaining photoresist layer is then removed to lift off a portion of the light emitting layer, which is present on the photoresist layer.

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