Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Huynh, Andy (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S640000, C438S700000, C438S701000
Reexamination Certificate
active
07968453
ABSTRACT:
A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is selectively removed to form an opening in the insulating layer. Therefore, the insulating layer provided with the opening is formed over a first conductive layer, and the first conductive layer below the insulating layer is exposed at the bottom of the opening. A second conductive layer is formed in the opening to be in contact with an exposed part of the first conductive layer, so that the first conductive layer and the second conductive layer are electrically connected in the opening provided in the insulating layer.
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Morisue Masafumi
Tanaka Koichiro
Costellia Jeffrey L.
Dehne Aaron A
Huynh Andy
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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