Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Fusing dopant with substrate
Reexamination Certificate
2005-10-06
2008-12-30
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Fusing dopant with substrate
C349S042000, C349S043000, C349S045000, C349S046000, C349S047000
Reexamination Certificate
active
07470604
ABSTRACT:
The present invention, the quality of the surface of a substrate is improved and the wettability thereof is controlled by light irradiation from the reverse side with respect to the substrate having the conductive layer. A conductive material or an insulating material is adhered on the modified surface by discharging it (including jetting, etc.), or the like to form a conductive layer and an insulating layer. The processing efficiency by the light can be enhanced by function of the light absorption and energy radiation of the photocatalytic substance. Furthermore, the mask layer is formed selectively on the conductive layer and the wettability of the region on the conductive layer that is a non-irradiation region is also controlled.
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Brown Valerie
Costellia Jeffrey L.
Nguyen Ha Tran T
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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