Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-07-24
2007-07-24
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S072000
Reexamination Certificate
active
11205220
ABSTRACT:
The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
REFERENCES:
patent: 6692997 (2004-02-01), So et al.
Yasuaki Nagahiro et al., Nikkei Microdevices' Flat Panel Display 2002 Yearbook, Nikkei BP Marketing, Inc., Oct. 2001, pp. 102-109 (English abstract).
Honda Tatsuya
Kawamata Ikuko
Maekawa Shinji
Shoji Hironobu
Suzuki Yukie
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Vu David
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