Method for manufacturing diffraction grating of Laser Diode

Details Method for manufacturing diffraction grating of Laser Diode Method for manufacturing diffraction grating of Laser Diode

2005-05-24

2005-05-24

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S032000

Reexamination Certificate

active

06897080

ABSTRACT:
Disclosed is a method for manufacturing a laser diode used as a light source in an optical communication system. The method comprises the steps of: forming a first photoresist pattern arranged at an interval corresponding to a predetermined grating cycle on the entire front surface of a semiconductor layer where a diffraction grating is to be formed; forming a diffraction-grating layer by etching the underlying semiconductor layer using the first photoresist pattern as an etching mask; forming a mask pattern on the diffraction-grating layer except for a predetermined diffraction-grating area; removing the mask pattern formed on top of parts of the diffraction-grating layer to be removed; and, removing the mask pattern resulting in the removal of the exposed parts of the diffraction-grating layer.

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patent: 6228671 (2001-05-01), Inomoto
patent: 6455338 (2002-09-01), Takagi et al.
patent: 6750478 (2004-06-01), Yoshida et al.
patent: 20030008428 (2003-01-01), Tsukiji et al.
patent: 20030064537 (2003-04-01), Yoshida et al.
patent: 20030147617 (2003-08-01), Park et al.

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