Method for manufacturing device substrate with metal...

Details Method for manufacturing device substrate with metal... Method for manufacturing device substrate with metal...

2006-12-05

2006-12-05

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S413000, C257SE21122, C438S455000

Reexamination Certificate

active

07145212

ABSTRACT:
A method (and resultant structure) of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion.

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