Semiconductor device manufacturing: process – Semiconductor substrate dicing – Having specified scribe region structure
Reexamination Certificate
2011-06-14
2011-06-14
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Having specified scribe region structure
C438S458000, C257SE21599
Reexamination Certificate
active
07960250
ABSTRACT:
A method for manufacturing a device, in which a wafer having a plurality of devices formed on the face thereof is divided into the individual devices, and an adhesive film is mounted on the back side of each device. This method comprises: a cutting groove forming step of cutting the back side of the wafer along predetermined division lines by a cutting blade to form cutting grooves, while leaving an uncut portion, which is thinner than the target thickness of the device, on the front side of the wafer; a back side grinding step of grinding the back side of the wafer to the target thickness of the device, while allowing the cutting grooves to remain in the back side of the wafer; an adhesive film mounting step of mounting an adhesive film to the back side of the wafer; a wafer supporting step of sticking the adhesive film side of the wafer, on which the adhesive film has been mounted, to the surface of a dicing tape; a wafer severing step of cutting the front side of the wafer along the predetermined division lines by a cutting blade to sever the uncut portion, thereby dividing the wafer into the individual devices and cutting the adhesive film; and an adhesive film separating step of expanding the dicing tape to separate the adhesive film per device.
REFERENCES:
patent: 5888883 (1999-03-01), Sasaki et al.
patent: 6638865 (2003-10-01), Tanaka
patent: 2000-182995 (2000-06-01), None
patent: 2002-118081 (2002-04-01), None
English language Abstract of JP 2000-182995, Jun. 30, 2000.
Disco Corporation
Greenblum & Bernstein P.L.C.
Vu David
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