Method for manufacturing crystalline semiconductor film and...

Details Method for manufacturing crystalline semiconductor film and... Method for manufacturing crystalline semiconductor film and...

2011-06-14

2011-06-14

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S052000, C257SE21533

Reexamination Certificate

active

07960261

ABSTRACT:
The present invention relates to a method for manufacturing a polycrystalline semiconductor film that can be used for a semiconductor device. In the method, an amorphous semiconductor film is irradiated with a femtosecond laser to be crystallized. By laser irradiation using a femtosecond laser, when an amorphous semiconductor film over which a cap film is formed is crystallized with a laser, it becomes possible to perform crystallization of the semiconductor film and removal of the cap film at the same time. Therefore, a step of removing the cap film in a later step can be omitted.

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