Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2011-08-02
2011-08-02
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S503000, C438S507000, C117S108000
Reexamination Certificate
active
07989325
ABSTRACT:
A crystalline semiconductor film is manufactured by a first step in which a crystalline semiconductor film is formed on and in contact with an insulating film and a second step in which the crystalline semiconductor film is grown in a condition where a generation frequency of nuclei is lower than in the first step. The second step is conducted in a condition where a flow ratio of a semiconductor material gas to a deposition gas is lower than in the first step. Thus, a crystalline semiconductor film whose crystal grains are large and uniform can be obtained and plasma damage to a base film of the crystalline semiconductor film can be reduced compared with a crystalline semiconductor film in a conventional method.
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Tajima Ryota
Yokoi Tomokazu
Costellia Jeffrey L.
Geyer Scott B
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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