Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-05
2008-07-01
Nguyen, Tuan H (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S678000
Reexamination Certificate
active
07393786
ABSTRACT:
A method for manufacturing copper wires on a substrate for a flat panel display device is disclosed. The method comprises following steps: providing a substrate; forming a seed layer on the surface; forming a patterned photoresist on the surface of the seed layer to expose a part of the seed layer; and plating a copper layer on the exposed part of the seed layer. As the copper layer is plated, an electrolyte solution comprises a sulfur-containing compound is used. The angle between the surface of the copper layer and the contact surface of the seed layer is greater than 0 degree and less than 90 degree. Through the method illustrated above, the film step-coverage in the following process can be improved, the generated voids in device can be reduced, the manufacturing steps can be simplified, and the complicated etching process can be avoided.
REFERENCES:
patent: 6495005 (2002-12-01), Colgan et al.
Chu Min-Sheng
Jenq Shrane-Ning
Li Hung-Wei
Liu Po-Tsun
Wan Chi-Chao
Bacon & Thomas PLLC
Nguyen Tuan H
Quanta Display Inc.
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