Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-11-13
1997-08-05
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438672, 438702, 438396, 438696, H01L 2144, H01L 2148
Patent
active
056542364
ABSTRACT:
In a method for manufacturing a contact structure, a first insulating layer, a first conductive layer and a silicon nitride layer are sequentially formed on a semiconductor substrate. The silicon nitride layer and the first conductive layer are anistropically etched with a first pattern mask. A sidewall of the first conductive layer is oxidized. A second insulating layer is formed on the entire surface, and a contact hole is perforated in the first and second insulating layers. Finally, a second conductive layer is buried in the contact hole.
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By M. Fukumoto et al., "Double Self-Aligned Contact Technology for Shielded Bit Line Type Stacked Capacitor Cell of 16 MDRAM", IEICE Transactions, vol. E 74, No. 4, pp. 818-826, Apr. 1991.
By T. Fukase et al., "A Margin-Free Contact Process Using an AL.sub.2 O.sub.3 Etch-Stop Layer for High Density Devices", IEDM Tech. Dig., pp. 837-840, 1992.
Bowers Jr. Charles L.
Gurley Lynne A.
NEC Corporation
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