Method for manufacturing contact structure

Details Method for manufacturing contact structure Method for manufacturing contact structure

1998-07-16

2000-12-05

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 256763, H01L 214763

Patent

active

06156639&

ABSTRACT:
Provided are a method for manufacturing contact structure to prevent, in the wire of a borderless structure, erosion in the contact area between the wire and a conductor. An interlayer insulating film (300) having a wire burying hole is formed and a conductor (400) is buried in the hole. Then, a wire layer (500) covering the hole is formed on the interlayer insulating film (300). The wire layer (500) is made so as to have a borderless structure by using a resist (540) as a mask. A barrier metal layer (510) suppresses erosion in the contact area between the conductor (400) and the wire layer (500).

REFERENCES:
patent: 5714804 (1998-02-01), Miller et al.

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