Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1997-10-01
2000-07-04
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438174, 438518, H01L 21338
Patent
active
060837810
ABSTRACT:
A method for making compound semiconductor devices including the use of a p-type dopant is disclosed wherein the dopant is co-implanted with an n-type donor species at the time the n-channel is formed and a single anneal at moderate temperature is then performed. Also disclosed are devices manufactured using the method. In the preferred embodiment n-MESFETs and other similar field effect transistor devices are manufactured using C ions co-implanted with Si atoms in GaAs to form an n-channel. C exhibits a unique characteristic in the context of the invention in that it exhibits a low activation efficiency (typically, 50% or less) as a p-type dopant, and consequently, it acts to sharpen the Si n-channel by compensating Si donors in the region of the Si-channel tail, but does not contribute substantially to the acceptor concentration in the buried p region. As a result, the invention provides for improved field effect semiconductor and related devices with enhancement of both DC and high-frequency performance.
REFERENCES:
patent: 4905061 (1990-02-01), Ohmuro et al.
Davies et al., "Anomalous Behaviour of Carbon Implants in Si-doped GaAs", Int. Sum. GaAs and Related Compounds, No. 112, Chap. 5, pp 275-280, 1990.
Gwilliam et al., "The use of Multi-Species Implantation for Carrier Profile Control in GaAs MESFETs Fabricated Using Silicon Ion Implantation", Nucl. Instr. and Methods, B74, pp. 94-97, 1993.
Baca Albert G.
Sherwin Marc E.
Zolper John C.
Kehl Dickson G.
McMillan Armand
Moser William R.
Nguyen Tuan H.
The United States of America as represented by the United States
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