Method for manufacturing CMOS circuits and CMOS circuits...

Details Method for manufacturing CMOS circuits and CMOS circuits... Method for manufacturing CMOS circuits and CMOS circuits...

2011-03-22

2011-03-22

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27062

Reexamination Certificate

active

07910997

ABSTRACT:
A method of manufacturing transistors of a first and second type on a substrate includes producing doped semiconductor areas with a first conductivity type in eventual contact areas of a first type of transistors, depositing a first intrinsic semiconductor layer over an entire surface, activating dopants in the semiconductor areas such that a contact area with the first conductivity type is produced in the intrinsic semiconductor layer, depositing a gate dielectric, producing a gate electrode by depositing a first conductive layer and patterning the first conductive layer, performing ion doping with dopants to produce contact areas with a second conductivity type for a second type of transistor, depositing a passivation layer, opening contact openings, and depositing and patterning a second conductive layer.

REFERENCES:
patent: 6545359 (2003-04-01), Ohtani et al.
patent: 6699738 (2004-03-01), Hwang et al.

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