Method for manufacturing capacitor

Details Method for manufacturing capacitor Method for manufacturing capacitor

2006-11-13

2009-06-16

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S672000, C438S675000, C438S700000, C257SE21577, C257SE21585

Reexamination Certificate

active

07547628

ABSTRACT:
A method for manufacturing a capacitor includes depositing an interlayer insulating film on or above a plug connected to a switching element, forming a hole in the interlayer insulating film such that the opening portion of the hole is surrounded by an overhang structure and that the plug is exposed in the bottom of the hole, removing the overhang structure, forming a lower electrode on the inner surface of the deep hole, forming a dielectric on the lower electrode, and forming an upper electrode on the dielectric. The above steps prevent the formation of a gap in the capacitor, since the overhang structure as a cause of the gap is removed. The coverage by the dielectric is also prevented from being poor.

REFERENCES:
patent: 2003/0162353 (2003-08-01), Park
patent: 2007/0123040 (2007-05-01), Hwang et al.
patent: 11-26712 (1999-01-01), None

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