Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-19
2011-04-19
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S381000, C257S416000
Reexamination Certificate
active
07928519
ABSTRACT:
In the method for manufacturing a capacitance sensor according to the present invention, after a protection layer is pattern-formed on the surface of a silicon substrate, a first metal layer is formed on the surface of a silicon substrate so as to be opposed to a protection layer non-formed area on which no protection layer is formed and to expose a part of the protection layer non-formed area. After that, a first insulation layer, a metal sacrificing layer, and a second insulation layer, and a second metal layer are formed on the first metal layer in this order. Then, the metal sacrificing layer is removed by supplying a metal etching solution on the metal sacrificing layer. Further, a part of the silicon substrate is removed by supplying a silicon etching solution to the silicon substrate from the portion, from which the metal sacrificing layer is removed, via the protection layer non-formed area exposed by the removal of the metal sacrificing layer.
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Loke Steven
Rabin & Berdo PC
Rohm & Co., Ltd.
Thomas Kimberly M
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