Method for manufacturing buried insulating layer type single...

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having semi-insulating component

Reexamination Certificate

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C438S479000, C438S762000, C438S765000

Reexamination Certificate

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06927144

ABSTRACT:
Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

REFERENCES:
patent: 5759908 (1998-06-01), Steckl et al.
patent: 6773951 (2004-08-01), Eriksen et al.

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