Method for manufacturing both a semiconductor crystalline...

Details Method for manufacturing both a semiconductor crystalline... Method for manufacturing both a semiconductor crystalline...

2007-09-11

2007-09-11

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S486000, C257SE21134, C257SE21347, C257S075000, C257S066000

Reexamination Certificate

active

11374351

ABSTRACT:
A method of forming a crystal grain for use in a semiconductor manufacturing process, the method including the steps of forming an oxide silicon film on a glass substrate, etching at least one hole at a predetermined location in the oxide silicon film, forming an amorphous silicon film over the oxide silicon film, heating the amorphous silicon film such that a portion of the amorphous silicon film in the at least one hole is in a non-melting state and a substantial remainder of the amorphous silicon film is brought into a melting state, and allowing the amorphous silicon film to cool such that crystal growth is generated using the non-melting state portion as a crystal nucleus.

REFERENCES:
patent: 2003/0141505 (2003-07-01), Isobe et al.
patent: 2003/0218169 (2003-11-01), Isobe et al.
patent: 2006/0084212 (2006-04-01), Anderson et al.
patent: 2006/0166456 (2006-07-01), Fujiwara et al.
patent: 2001210017 (2003-02-01), None

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