Method for manufacturing boron-free silicon dioxide

Details Method for manufacturing boron-free silicon dioxide Method for manufacturing boron-free silicon dioxide

1983-11-25

1985-03-19

Dixon, Jr., William R.

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

423339, 423341, C01B 3312

Patent

active

045058830

ABSTRACT:
The invention provides a method for manufacturing boron-free SiO.sub.2 by purification of hexafluorosilicic acid. In this case, an aqueous solution of the boron-containing hexafluorosilicic acid is transferred to the organic phase by treatment with organic compounds immiscible with water and subsequently the organic phase is converted to boron-free hexafluorosilicic acid by means of fluid-fluid extraction in the alkaline or acid medium. Particularly, complex-forming compounds, such as tri-iso-octylamine, and organic solvents, such as xylol, are used as organic compounds. The method produces SiO.sub.2 with a boron content of less than 1 ppm and is usable for manufacturing silicon for solar cells.

REFERENCES:
patent: 3271107 (1966-09-01), Nickerson et al.
patent: 3592590 (1971-07-01), Knarr
patent: 3714330 (1973-01-01), Barker
patent: 3808309 (1974-04-01), Daiga et al.
patent: 4247528 (1981-01-01), Dosaj et al.
patent: 4294811 (1981-10-01), Aulich et al.
VPA 82 P 1128 DE (P 32 06 766.6).

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