Method for manufacturing bismuth-containing oxide single crystal

Details Method for manufacturing bismuth-containing oxide single crystal Method for manufacturing bismuth-containing oxide single crystal

1986-06-30

1987-10-27

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118715, 118716, 156613, 156DIG64, 156DIG67, 156DIG74, 156DIG79, 423326, 423593, 423594, 4272553, C30B 2500

Patent

active

047027916

ABSTRACT:
A method is disclosed for manufacturing a bismuth-containing oxide single crystal, in which vapor of bismuth or alkylated bismuth and vapor of an organic compound of other metal ion components of a crystal are introduced into a heated reaction chamber to be reacted with oxygen gas, so that the desired bismuth-containing oxide single crystal is deposited on a substrate prepared in the reaction chamber. A Bi.sub.12 SiO.sub.20 single oxide crystal can be produced by the use of bismuth or alkylated bismuth and alkylated silicon or silicon alkoxide or by the use of bismuth or alkylated bismuth and alkylated germanium or germanium alkoxide. A (Y.sub.1--x Bi.sub.x).sub.3 Fe.sub.5 O.sub.12 single crystal can be poduced by the use of bismuth or alkylated bismuth yttrium alkoxide and carbonyl iron.

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patent: 4330524 (1982-05-01), Gra?meier et al.
patent: 4508590 (1985-04-01), Kaplan et al.
Hill et al., J. Mat. Sc. 9 (1974) pp. 1252-1254.

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