Method for manufacturing bipolar planar transistors

Details Method for manufacturing bipolar planar transistors Method for manufacturing bipolar planar transistors

1984-02-03

1984-11-20

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576B, 148187, 156657, 1566591, 357 40, 357 91, 430313, H01L 744, H01L 2702, B44C 122, C03C 1500

Patent

active

044837380

ABSTRACT:
A method of manufacturing bipolar transistors is described. The emitter areas are protected by means of an oxidation masking layer and subsequently after applying a photo-resist layer which defines the base areas two implantation processes of ions of the base zone conductivity type are performed. The one is performed with low doping dose and high acceleration voltage sufficient to render the masking layer penetrable and the other with high doping dose and low acceleration voltage as to render the masking layer impenetrable.

REFERENCES:
patent: 4298402 (1981-11-01), Hingarh
patent: 4347654 (1982-09-01), Allen et al.

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