Method for manufacturing BICMOS devices

Details Method for manufacturing BICMOS devices Method for manufacturing BICMOS devices

1992-04-27

1993-03-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 55, 437 59, 437162, 148DIG9, H01L 21265

Patent

active

051963566

ABSTRACT:
A method for BICMOS devices is disclosed, wherein an emitter and a base of a vertical PNP transistor are self-aligned, an extrinsic base is formed by adapting a base electrode polysilicon layer as a diffusion source, and the base electrode and an intrinsic base are coupled by diffusion of N type impurities adapting the N.sup.+ polysilicon as a diffusion source, so that the manufacturing process is simplified and the resistance of the extrinsic base is reduced.

REFERENCES:
patent: 4546539 (1985-10-01), Beasom
patent: 4694562 (1987-09-01), Iwasaki et al.
patent: 4764482 (1988-08-01), Hsu
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4956305 (1990-09-01), Arndt
patent: 5001073 (1991-03-01), Huie
patent: 5011784 (1991-04-01), Ratnakumar
patent: 5045912 (1991-09-01), Ohki
patent: 5079177 (1992-01-01), Lage et al.

Affiliated with

Also associated with

Rating

Method for manufacturing BICMOS devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing BICMOS devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing BICMOS devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1351203