Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-02-16
1995-02-07
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156633, 437 44, 437922, 148DIG55, H01L 21306
Patent
active
053873114
ABSTRACT:
A method for removing excess spacer material in the link vias and open areas of an anti-fuse structure without thinning the anti-fuse layer in the vias by overetching. In an anti-fuse structure, a spacer layer is deposited on an anti-fuse layer where vias in the structure cause a thinner layer of spacer material to be deposited in the vias. A first etch of the spacer layer is accomplished to provide protective spacers in the vias. The etch completely removes the thinner section of the spacer material between the spacers in the vias without overetch, while some spacer material portions remain on the other, open areas of the anti-fuse structure. Designated fuse vias are masked and a second etch of the leftover spacer material is accomplished. This method removes excess spacer material from link vias and other areas around the fuse vias and prevents the anti-fuse layer in the fuse vias from thinning from overetching procedures.
REFERENCES:
patent: 4751197 (1985-06-01), Wills
patent: 5120679 (1992-06-01), Boardman et al.
patent: 5208177 (1993-05-01), Lee
Delgado Miguel A.
Hall Stacy W.
Hearn Brian E.
Picardat Kevin M.
VLSI Technology Inc.
LandOfFree
Method for manufacturing anti-fuse structures does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing anti-fuse structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing anti-fuse structures will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1108339