Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2004-11-30
2008-10-28
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
Reexamination Certificate
active
07442560
ABSTRACT:
In order to provide an anisotropic conductive sheet which can be applied to more finely and more narrowly pitched electrodes and also to provide spring electrodes applied for the anisotropic conductive sheet, the spring electrodes manufactured as follows. A part having a bending leaf spring shape is formed out of a monocrystal silicon by anisotropic etching and gold is plated on the surface of the part so as to obtain a silicon spring electrode1. The silicon spring electrodes1are inserted in through holes formed on a silicone rubber sheet and fixed to the through holes.
REFERENCES:
patent: 5188702 (1993-02-01), Takayama et al.
patent: 56/48951 (1981-11-01), None
patent: 2001/291430 (2001-10-01), None
patent: 2003/121468 (2003-04-01), None
patent: 2003-121468 (2003-04-01), None
Kovacs et al., “Bulk Micromachining of Silicon”, Aug. 1998, Proceedings of the IEEE, vol. 86, No. 8, pp. 1536-1551.
Garber Charles D.
Hyra Clifford D.
James Creighton Wray
Micro Precision Co. & Ltd.
Okins Electronics Co., Ltd.
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