Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-14
2011-06-14
Bryant, Kiesha R (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21581, C438S411000, C438S422000
Reexamination Certificate
active
07960275
ABSTRACT:
A method for manufacturing a structure of electrical interconnections for an integrated circuit having levels of interconnections, the method having steps of depositing a layer of sacrificial material on the substrate, etching the layer of sacrificial material with a pattern corresponding to electrical conductors, depositing, on the etched layer of the layer of sacrificial material, a layer of permeable membrane allowing an attack agent to break down the sacrificial material, breaking down the sacrificial material by using the attack agent to form air gaps to replace the broken down sacrificial material, forming electrical conductors in the etched track so as to obtain electrical interconnections separated by air gaps, and depositing a layer of insulating material to cover the electrical interconnections.
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Bryant Kiesha R
Commissariat a l''Energie Atomique
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tornow Mark W
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