Method for manufacturing an interconnection structure in a semic

Details Method for manufacturing an interconnection structure in a semic Method for manufacturing an interconnection structure in a semic

1997-06-24

2000-04-11

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438625, 438637, 438643, 438666, 257774, H01L 2144

Patent

active

060487925

ABSTRACT:
A method for forming an interconnection structure in a semiconductor device includes the steps of forming a thin, first tungsten film in a via-hole by a first LPCVD process using SiH.sub.4 gas and WF.sub.6 gas simultaneously and forming a thick, second tungsten film to fill the via-hole by a second LPCVD process using H.sub.2 gas and WF.sub.6 gas, and patterning the second tungsten film to leave a tungsten plug in the via-hole. A reliable contact between the tungsten plug and an underlying interconnect or diffused region can be obtained by not introducing SiH4 gas alone to avoid an excess amount of SiH.sub.4.

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Japanese Office Action dated Mar. 3, 1998 with English language translation of Japanese Examiner's comments.
European Search Report, Dec. 8, 1997.
L. Chang, et al. "Chemical Vapor Deposition Tungsten via Plug Process Development With Polyimide Interlevel Dielectric in a Multilevel Metal System", Journal of Vacuum Science & Technology B 10, (1992) Sept./Oct., No. 5.

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