Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-04-21
2009-06-02
Menz, Douglas M (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S737000, C257SE23020, C257SE21477
Reexamination Certificate
active
07541275
ABSTRACT:
The present invention provides an interconnect for use in an integrated circuit, a method for manufacturing the interconnect, and a method for manufacturing an integrated circuit including the interconnect. The interconnect (100), among other elements, includes a surface conductive lead (160) located in an opening formed within a protective overcoat (110), and a barrier layer (140) located between the protective overcoat (110) and the surface conductive lead (160), a portion of the barrier layer (140) forming a skirt (145) that extends outside a footprint of the surface conductive lead (160).
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Mercer Betty Shu
Morton Alec J.
Ng Laurinda W.
Shoemaker Erika Leigh
Thompson C. Matthew
Brady III Wade J.
Fulk Steven J
Menz Douglas M
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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