Method for manufacturing an interconnect

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C257S737000, C257SE23020, C257SE21477

Reexamination Certificate

active

07541275

ABSTRACT:
The present invention provides an interconnect for use in an integrated circuit, a method for manufacturing the interconnect, and a method for manufacturing an integrated circuit including the interconnect. The interconnect (100), among other elements, includes a surface conductive lead (160) located in an opening formed within a protective overcoat (110), and a barrier layer (140) located between the protective overcoat (110) and the surface conductive lead (160), a portion of the barrier layer (140) forming a skirt (145) that extends outside a footprint of the surface conductive lead (160).

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