Method for manufacturing an epitaxial wafer with a group III met

Details Method for manufacturing an epitaxial wafer with a group III met Method for manufacturing an epitaxial wafer with a group III met

1998-06-23

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

438478, 117952, H01L 2120

Patent

active

06110809&

ABSTRACT:
A new method for manufacturing a Group III metal nitride epitaxial wafer comprises providing a first nitrogen-contained gas source, providing a second Group III metal trichloride--containing gas source, and causing said first gas to react with second gas in a heating region, thereby forming a Group III metal nitride epitaxial layer on a substrate. The formed epitaxial wafer can serve as a substrate of a laser diode.

REFERENCES:
patent: 4144116 (1979-03-01), Jacob et al.
Lee et al., "Vapor phase epitaxy of GaN using GaC13/N2", Journal of Crystal Growth, vol. 169, pp. 689-696, Dec. 1996.
Topf et al., "Low-pressure chemical vapor deposition of GaN epitaxial films", Journal of Crystal Growth, vol. 189-190, pp. 330-334, Jun. 1998.

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