Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-08
1999-08-31
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438635, 438738, H01L 2144
Patent
active
059466006
ABSTRACT:
A process for manufacturing an electronic interconnect structure, the process including the steps of depositing an adhesion metal layer over a dielectric material surface having at least one exposed aluminum surface; depositing a barrier metal layer over the adhesion metal layer; depositing a first layer of aluminum over the barrier metal layer; depositing an intermediate barrier metal layer over the first layer of aluminum; applying a photoresist layer on top of the intermediate barrier metal layer; exposing and developing the photoresist layer; removing the exposed barrier metal and photoresist layer, leaving a layer of barrier metal over the aluminum layer; converting those portions of the layer of aluminum which are not covered by barrier metal to a porous aluminum oxide by porous anodization; removing the porous aluminum oxide; and removing the exposed barrier metal and adhesion metal layers to leave exposed patterned aluminum, and an electronic interconnect structure manufactured by this method.
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patent: 4531144 (1985-07-01), Holmberg
patent: 5580825 (1996-12-01), Labunov et al.
patent: 5705428 (1998-01-01), Liu et al.
patent: 5731047 (1998-03-01), Noddin
Hurwitz Dror
Igner Eva
Katz Dror
Yofis Boris
Berry Renee R.
Bowers Charles
P.C.B. Ltd.
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