Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-03-13
2007-03-13
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S085000, C438S104000, C438S608000, C148S431000
Reexamination Certificate
active
10503300
ABSTRACT:
Although an Ag—CdO-based material has excellent electric properties such as deposition resistance, arc resistance and low contact resistance, which are required for an electric contact, the discharge standard provision in Japan, EC Directive on Waste from Electrical and Electronic Equipment (WEEE) and the like have been directed toward disuse of Cd, as already known.Thus, the present invention is characterized in that after an atmosphere in a pressured oxidation furnace is replaced with oxygen, the temperature of an internal-oxidative Ag alloy prepared under a condition of a cold roll rate of 50 to 95% is gradually raised from a temperature of 200° C. or less in a pressured oxygen atmosphere with an oxygen pressure of 5 to 50 kg/cm2and internal oxidation processing is performed with an upper limit temperature of 700° C., thereby restraining an Ag-rich layer generated on an outermost surface and an oxide-flocculated layer immediately below the Ag-rich layer and uniformly and finely precipitating and dispersing a composite oxide of added elements to a deep part of an internal structure.
REFERENCES:
patent: 3874941 (1975-04-01), Shibata
patent: 3933485 (1976-01-01), Shibata
patent: 5068219 (1991-11-01), Hagino et al.
patent: 5078810 (1992-01-01), Tanaka et al.
patent: 5102480 (1992-04-01), Tanaka et al.
patent: 5834374 (1998-11-01), Cabral, et al.
patent: 0508055 (1992-10-01), None
patent: 0877403 (1998-11-01), None
patent: 54-2234 (1979-01-01), None
patent: 58-100650 (1983-06-01), None
patent: 59-219432 (1984-12-01), None
patent: 62-241207 (1987-10-01), None
patent: 02-173226 (1990-07-01), None
patent: 9-59727 (1997-03-01), None
PCT/JP02/08294 Search Report EPA 02-752779.3 Office Action dated Sep. 9, 2005.
Chinese Patent Office - Office Action, 02820628.2, Apr. 14, 2006.
Austrian Patent Office Examination Report (4 pages).
Kamiura Kenichi
Kumita Hideo
Sato Sadao
Sekiguchi Kiyoshi
Shiokawa Kunio
Le Dung A.
Levisohn Berger LLP
Tokuriki Honten Co. Ltd.
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