Method for manufacturing accelerometer sensor

Details Method for manufacturing accelerometer sensor Method for manufacturing accelerometer sensor

1996-02-21

1998-03-10

Powell, William

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 87, 1566281, 1566571, 437228, 437927, H01L 2100, B44C 122

Patent

active

057257850

ABSTRACT:
A method of manufacturing an accelerometer sensor having a mass portion is disclosed. A P-type silicon area is formed in an upper area of a P-type silicon substrate by means of impurity doping. An N-type silicon layer is formed on the silicon substrate through vapor phase epitaxy. A recess defining the mass portion is formed in the silicon substrate through an etching process. A current is supplied to the silicon substrate in an electrolytic solution, such as HF aq., while the substrate is connected to an anode of a power supply. The P-type silicon area is then converted to a porous silicon area. The porous silicon area is subjected to a wet etching to be hollowed, thus obtaining a mass portion of a desired shape.

REFERENCES:
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 5332469 (1994-07-01), Mastrangelo
patent: 5344523 (1994-09-01), Fung et al.
patent: 5352635 (1994-10-01), Tu et al.

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