Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-05
2011-07-05
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S645000, C257SE21585
Reexamination Certificate
active
07972956
ABSTRACT:
A wire structure of a semiconductor device capable of ensuring a process margin for bit line patterning in a 6F2cell layout of a semiconductor device, and a method for manufacturing the same.
REFERENCES:
patent: 7023044 (2006-04-01), Kohyama et al.
patent: 7183603 (2007-02-01), Park
patent: 2001/0054719 (2001-12-01), Ahn et al.
patent: 2003/0218199 (2003-11-01), Forbes et al.
patent: 2005/0218440 (2005-10-01), Park
patent: 2008/0088029 (2008-04-01), Hong et al.
patent: 10-2004-0006500 (2004-01-01), None
patent: 10-0618907 (2006-08-01), None
patent: 10-2008-0097005 (2008-11-01), None
Kang Chun Soo
Lee Jeon Kyu
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
Nguyen Khiem D
LandOfFree
Method for manufacturing a wire structure of a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a wire structure of a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a wire structure of a semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2691335