Method for manufacturing a trench structure in a substrate

Details Method for manufacturing a trench structure in a substrate Method for manufacturing a trench structure in a substrate

1992-10-02

1993-11-16

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 437 67, 437 52, 148DIG50, H01L 21312

Patent

active

052620026

ABSTRACT:
A trench mask containing SiO.sub.2 is produced on a substrate (1) of single-crystal silicon. After deposition of a first Si.sub.3 N.sub.4 layer, first Si.sub.3 N.sub.4 spacers (31) are formed by anisotropic etching, and a first trench is etched to a first depth (t.sub.1). After selective removal of passivation layers arising in the first trench etching and after deposition of a second Si.sub.3 N.sub.4 layer, second Si.sub.3 N.sub.4 spacers (41) are formed by anisotropic etching. A second trench is etched to a second depth (t.sub.2), whereby the trench structure (5) is formed to a total depth (t.sub.1 and t.sub.2).

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15th Annual Tegal Plasma Seminar, 1989 "Single Crystal Silicon Etching in a Tri-Electrode Etcher Using CBrF.sub.3 Chemistry", Manfred Engelhardt, Siemens AG, Corporate Research and Development and Microelectronics.
9th International Symposium on Plasma Chemistry Pugnochiuso, Italy 1989 "Anisotropic Etching of Silicon in Magnetic Field Enhanced Plasma" V. Grewal et al, Siemens AG Corporate Research and Development, Development Laboratory for Process Technology.
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