Method for manufacturing a transparent element with...

Details Method for manufacturing a transparent element with... Method for manufacturing a transparent element with...

2007-07-24

2007-07-24

Smtih, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S508000, C438S508000, C257SE31126, C257SE33064, C379S093190, C977S811000

Reexamination Certificate

active

10998897

ABSTRACT:
A conductive pattern, made of a transparent conductive oxide, such as ITO including electrodes (2) and conductive paths (4) is formed on one face of a transparent substrate (3) made of sapphire or toughened glass, then coated with a first layer (5) of a transparent dielectric with a low refractive index, such as MgF2or LiF2, and then a second layer (7) of another transparent dielectric having a higher refractive index than the first, such as Al2O3, Ta2O5or DLC.

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patent: 6163313 (2000-12-01), Aroyan et al.
patent: 6982432 (2006-01-01), Umemoto et al.
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patent: 196 36 970 (1998-03-01), None
patent: 2 751 638 (1998-01-01), None
Patent Abstracts of Japan, vol. 0102, No. 12, (P-480) Jul. 24, 1986, & JP 61 051101 (Toray Ind. Inc.) Mar. 13, 1986.

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