Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-05-26
2000-06-27
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438155, 438166, 438 30, 438163, 438158, 438149, 257192, 257 66, 257350, H01L 310328
Patent
active
060806079
ABSTRACT:
The invention provides a method for manufacturing a transistor having a low leakage current. In general, spacers must be formed to isolate a gate from a subsequently-formed drain, thereby reducing a leakage current. In the invention, the spacers are formed on the vertical sides of the gate by using a selective deposition process. Therefore, the method for manufacturing a transistor having a low leakage current according to the invention not only constitutes a simplified process, but also controls the widths of the spacers precisely, so that the leakage current of the transistor can be greatly decreased.
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Chang Chun Yen
Chang Ting-Chang
Lin Hsiao-Yi
Shih Po-Sheng
Bednarek Micheal D.
Bowers Charles
National Science Council
Schillinger Laura
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