Method for manufacturing a three-terminal superconducting device

Details Method for manufacturing a three-terminal superconducting device Method for manufacturing a three-terminal superconducting device

1995-08-23

1997-06-10

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

505193, 505234, 505237, 505701, 427 62, 427 63, H01L 3924

Patent

active

056375557

ABSTRACT:
A method for manufacturing a three-terminal superconducting device is disclosed. A superconducting channel constituted in an oxide superconductor thin film is deposited on a deposition surface of a substrate. A gate electrode for the device is formed through a gate insulator layer on the superconducting channel of the device. The steps of forming the gate electrode include forming a thin film that stands upright with respect to the insulator layer for the gate.

REFERENCES:
patent: 5466664 (1995-11-01), Inada et al.
patent: 5494891 (1996-02-01), Nakamura et al.

Affiliated with

Also associated with

Rating

Method for manufacturing a three-terminal superconducting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a three-terminal superconducting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a three-terminal superconducting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-764532