Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-11-21
2006-11-21
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C257SE27112, C257S059000, C257S291000, C257SE21347, C257SE21475, C257SE21596
Reexamination Certificate
active
07138303
ABSTRACT:
In a thin film transistor (TFT) including an insulating substrate and a polycrystalline silicon island formed on the insulating layer, a grain size of the polycrystalline silicon island is elongated along one direction. A source region, a channel region and a drain region are arranged in the polycrystalline silicon island in parallel with the direction.
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Haga Hiroshi
Tanabe Hiroshi
Budd Paul
Jackson Jerome
Katten Muchin & Rosenman LLP
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