Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-03-25
2008-03-25
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C438S153000, C438S487000, C438S482000, C438S486000, C438S151000, C438S162000, C438S378000, C257S066000, C257S347000, C257SE21130, C257SE21133, C257SE21134, C257SE21193, C257SE21517
Reexamination Certificate
active
07348222
ABSTRACT:
It is an object of the present invention to provide a method for removing the metal element from the semiconductor film which is different from the conventional gettering step for removing the metal element from the semiconductor film.In the present invention, when Ni element (Ni) is used as the metal element and a silicon-based film (referred to as a silicon film) is used as the semiconductor film, nickel silicide segregates in the ridge formed in the silicon film by irradiating the pulsed laser light. Next, etching solution of hydrofluoric acid based etchant is used to remove the nickel silicide segregated in the ridge. When the surface of the semiconductor film is rough after removing the metal element by means of etching, the laser light may be irradiated to the semiconductor film under the insert atmosphere to flatten the surface thereof.
REFERENCES:
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5824573 (1998-10-01), Zhang et al.
patent: 5858823 (1999-01-01), Yamazaki et al.
patent: 5879977 (1999-03-01), Zhang et al.
patent: 6110770 (2000-08-01), Zhang et al.
patent: 6143661 (2000-11-01), Kousai et al.
patent: 6190949 (2001-02-01), Noguchi et al.
patent: 6232156 (2001-05-01), Ohtani et al.
patent: 6319761 (2001-11-01), Zhang et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6451638 (2002-09-01), Zhang et al.
patent: 6479329 (2002-11-01), Nakajima et al.
patent: 6548830 (2003-04-01), Noguchi et al.
patent: 6777713 (2004-08-01), Miyairi et al.
patent: 6828179 (2004-12-01), Yamazaki et al.
patent: 6890840 (2005-05-01), Isobe et al.
patent: 7247527 (2007-07-01), Shimomura et al.
patent: 2003/0122129 (2003-07-01), Yamazaki et al.
patent: 2003/0143375 (2003-07-01), Noguchi et al.
patent: 2004/0259389 (2004-12-01), Yamazaki et al.
patent: 2004/0266223 (2004-12-01), Tanaka et al.
patent: 2005/0023531 (2005-02-01), Shoji et al.
patent: 2005/0026401 (2005-02-01), Shimomura et al.
patent: 2005/0208710 (2005-09-01), Isobe et al.
patent: 07-161634 (1995-06-01), None
patent: 10-041234 (1998-02-01), None
patent: 2001-223219 (2001-08-01), None
patent: 2002-203789 (2002-07-01), None
Nakata et al., “Crystallization of an A-Si Film by a ND:YAG Pulse Laser Beam with Linear Polarization”; AM-LCD '00 Digest of Technical Papers; pp. 265-268, Jul. 12-14, 2000.
Oron.M et al., “New Experimental Evidence of the Periodic Surface Structure in Laser Annealing,” Appl. Phys. Lett. (Applied Physics Letters), Nov. 15, 1979, vol. 35, No. 10, pp. 782-784.
Fauchet,P et al., “Surface Ripples on Silicon and Gallium Arsenide Under Picosecond Laser Illumination,” Appl. Phys. Lett. (Applied Physics Letters), May. 1, 1982, vol. 40, No. 9, pp. 824-826.
Ohnuma Hideto
Shimomura Akihisa
Shoji Hironobu
Ahmadi Mohsen
Costelli Jeffrey L.
Lebentritt Michael
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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