Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2008-04-29
2008-04-29
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S514000, C438S138000, C438S268000, C438S672000, C257S492000, C257S493000
Reexamination Certificate
active
11420490
ABSTRACT:
A method of manufacturing a semiconductor device includes providing semiconductor substrate having trenches and mesas. At least one mesa has first and second sidewalls. The method includes angularly implanting a dopant of a second conductivity into the first sidewall, and angularly implanting a dopant of a second conductivity into the second sidewall. The at least one mesa is converted to a pillar by diffusing the dopants into the at least one mesa. The pillar is then converted to a column by angularly implanting a dopant of the first conductivity into a first sidewall of the pillar, and by angularly implanting the dopant of the first conductivity type into a second sidewall of the pillar. The dopants are then diffused into the pillar to provide a P-N junction of the first and second doped regions located along the depth direction of the adjoining trench. Finally, the trenches are filled with an insulating material.
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Hshieh Fwu-Iuan
Pratt Brian D.
So Koon Chong
Panitch Schwarze Belisario & Nadel LLP
Thai Luan
Third Dimension (3D) Semiconductor, Inc.
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